Memory system and memory control method

ABSTRACT

According to one embodiment, a memory system includes an array of memory cells that store two or more bits of data each, and a memory controller to control writing data into the memory cells and reading from the memory cells. When a first command is received from a host, the memory controller reads data designated by the first command from the array and then rewrites the read data back into the array using a writing method in which a lower number of bits per memory cell is written than the originally stored manner of the read data. When a read command designating the rewritten data is received from the host, the memory controller reads from the array and transfers it to the host.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2021-152518, filed Sep. 17, 2021, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a memory system and amemory control method.

BACKGROUND

In recent years, to deal with the demand for miniaturization and largerstorage capacity, semiconductor memory devices, such as NAND typememories, have been arranged in three-dimensional structures. In suchtypes of semiconductor memory devices, a memory cell transistor may beconfigured as not only as a SLC (Single Level Cell) capable of storing1-bit (2 values) data, but also as a MLC (Multi Level Cell) capable ofstoring 2-bit (4 values) data, TLC (Triple Level Cell) capable ofstoring 3-bit (8 values) data, QLC (Quad Level Cell) capable of storing4-bit (16 values) data, and PLC (Penta Level Cell) capable of storing5-bit (32 values) data.

However, generally, these multi-level type memory cell transistors leadto deterioration of the read limit performance, and thus, data may notbe transferred at a sufficiently high speed despite increases in a hostinterface speed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a memory system incorporating asemiconductor device according to an embodiment.

FIG. 2 is a block diagram illustrating an example of a memorycontroller.

FIG. 3 is a block diagram illustrating an example of a memory chip.

FIG. 4 is a view illustrating an example of a command format forimplementing a high-speed read preparation command and a write-backcommand.

FIG. 5 is a timing chart for reading in a first embodiment.

FIG. 6 is a timing chart for writing and reading in a comparativeexample.

FIG. 7 is a memory map representing a memory area of a memory chip.

FIG. 8 is a flowchart illustrating an operation of a first embodiment.

FIGS. 9A and 9B are flowcharts illustrating an operation flow adopted ina second embodiment.

FIG. 10 is a block diagram illustrating a modification of a memorysystem.

FIGS. 11A and 11B are flowcharts illustrating an operation of a modifiedmemory system.

FIG. 12 is a flowchart illustrating a modification.

DETAILED DESCRIPTION

Embodiments provide a memory system and a memory control method capableof providing a high-speed reading.

In general, according to one embodiment, a memory system includes amemory controller and a memory array having a plurality of memory cellsconfigured to store two or more bits of data in each of the memorycells. The memory controller is configured to cause data to be writteninto of the plurality of memory cells using writing methods fordifferent number of bits of data and cause the data written into theplurality of memory cells to be read. When a first command is receivedfrom a host, the memory controller is configured to cause data indicatedby the first command to be read from the plurality of memory cells, andthen cause the read data to be rewritten into the plurality of memorycells using a writing method for a fewer number of bits per memory cellthan the writing method used to write the data to the plurality ofmemory cells before the reading of the data. When a read commandcorresponding to the data indicated by the first command is receivedfrom the host after the first command, the memory controller isconfigured to read the rewritten data from the plurality of memorycells, and then transfer the data to the host.

Hereinafter, certain example embodiments of the present disclosure willbe described with reference to the drawings.

In general, an embodiment changes a writing method for recorded data toa writing method with a smaller transfer time, and re-records therecorded data using the changed writing method, according to a requestfrom a host, thereby improving the read performance.

The amount of information recorded in one memory cell transistor of aNAND type memory increases from 1-bit (SLC) to 2-bit (MLC), 3-bit (TLC),4-bit (QLC), and 5-bit (PLC). When the amount of information storable inone memory cell transistor increases in this way, the storage capacityrequired for a device may be achieved with a relatively small number ofcells, so that the chip size may be reduced, thereby reducing the cost.However, as a memory cell is further multi-valued, that is, as thenumber of bits of information recorded in each memory cell transistor(referred to as the number of cell bits) increases, the number ofdifferent read voltages required to read one-bit data from a memory celltransistor increases, and thus, the time (“tR”) until data istransferred to a host in response to a request from the host increases.

In addition, the value of tR is also generally a parameter of a memorycell transistor that depends on the type of NAND memory or the like. AstR increases, the limit performance of reading (referred to as the limitread performance), which corresponds to the amount of data readable perunit time, deteriorates. The limit read performance of a memory deviceis determined by the multiplication of values (1), (2), and (3) below.

(1) Data size (page size) that can be read per die of NAND type memoryfor one read request

(2) Reciprocal of tR

(3) Number of NAND dies per device

In recent years, the speed of the interface between a memory device anda host (host interface) has increased. Thus, as tR increases inconjunction with use of a higher multi-value data storage technique, thelimit read performance of the memory device may still be lower than thespeed of the host interface. As such, the data transfer between the hostand the memory device during reading will be restricted by the limitread performance of the memory device.

Therefore, in order to enhance the limit read performance, a method ofincreasing the page size (value (1)) or increasing the number of dies(value (3)) may be considered. However, increasing the page size causesan increase in the cost of the die of the NAND type memory, which isdifficult to justify. When a method of increasing the number of dies isadopted, the storage capacity of the memory device product alsogenerally increases, but increasing the number of dies for increasingread response times may not be considered an appropriate measure in viewof other product demand for similar dies. Furthermore, when the numberof dies is increased without changing the storage capacity of the device(e.g., more dies, but less storage capacity per die), then a NAND typememory die having a small storage capacity is used, which results in anincrease in cost on a storage capacity basis.

In order to enhance the limit read performance of the memory device, amethod of increasing the reciprocal of tR of (2) may also be considered.Even for the same memory device, multiple writing methods havingdifferent numbers of cell bits may be adopted. For example, within thesame memory device, data writing may be performed using a writing methodcorresponding to QLC or a writing method corresponding to SLC.Therefore, at the time of data recording, the writing is performed byadopting a writing method with a small tR, that is, a writing methodwith a smaller number of cell bits. However, when data is recorded byadopting, for example, SLC which is a writing method with the smallesttR (the smallest number of cell bits) in order to reduce tR, there is aproblem that the recordable capacity is lowered.

Therefore, in the present embodiment, at the time of writing, arecording is performed by adopting a writing method having a largernumber of cell bits than that of SLC, and at the time of reading data,the data are re-recorded by a writing method with relatively smaller tR(the smaller number of cell bits) according to a request from a host,thereby enhancing the limit read performance of a memory device at thetime of reading.

(Configuration of Memory System)

FIG. 1 is a block diagram illustrating a memory system 1. FIG. 2 is ablock diagram illustrating an example of a specific configuration of amemory controller 3.

A memory system 1 includes a memory controller 3 and four memory chips 4(memory chip 4A, memory chip 4B, memory chip 4C, 4D). The number ofmemory chips 4 is not limited to four. The number of memory chips may beselected freely. The memory controller 3 and the memory chip(s) 4 makeup a memory device.

The memory system 1 may be connected to a host 2. The host 2 is, forexample, an electronic device such as a personal computer, a mobileterminal, an in-vehicle device, a server or the like. The host 2includes a central processing unit (CPU) 2 a as a processor, a ROM, anda DRAM 2 b. In response to a request from the host 2, the memory system1 stores data from the host 2 in each memory chip 4, or reads datastored in each memory chip 4 and outputs the data to the host 2.Specifically, the memory system 1 may write data into each memory chip 4in response to a write request from the host 2, and may read data fromeach memory chip 4 in response to a read request from the host 2.

The memory system 1 may be a UFS (Universal Flash Storage) device or thelike in which the memory controller 3 and the plurality of memory chips4 are configured as one package, or an SSD (Solid State Drive) or thelike. FIG. 1 represents a state where the memory system 1 is connectedto the host 2.

The memory chip 4 is a semiconductor memory device comprising a NANDtype flash memory or the like that stores data in a nonvolatile manner.As illustrated in FIG. 1 , the memory controller 3 and each memory chip4 are connected to each other via a NAND bus. The memory controller 3controls writing of data into the memory chips 4 according to a writerequest from the host 2. The memory controller 3 controls reading ofdata from the memory chips 4 according to a read request from the host2. The memory controller 3 may control writing of data into and readingof data from the memory chip 4 spontaneously or for other purposesinstead of in response to a request from the host 2.

In FIG. 2 , the memory controller 3 includes a CPU 11, a ROM 12, a RAM(Random Access Memory) 13, an ECC (Error Check and Correct) circuit 14,a host interface (I/F) circuit 15, and a memory I/F circuit 16. The CPU11, the ROM 12, the RAM 13, the ECC circuit 14, the host I/F circuit 15,and the memory I/F circuit 16 are connected to each other by an internalbus 17.

The host I/F circuit 15 receives data from the host 2 and outputs arequest, write data, and the like included in the received data to theinternal bus 17. Further, the host I/F circuit 15 transmits data readfrom the memory chip 4, a response from the CPU 11, and the like to thehost 2. The host 2 also has an I/F circuit corresponding to the host I/Fcircuit 15.

The host 2 and the host I/F circuit 15 are connected to each other via apredetermined interface. As for the predetermined interface, forexample, various interfaces such as a parallel interface of eMMC(embedded Multi Media Card), a serial extension interface of PCIe(Peripheral Component Interconnect-Express), and a high-speed serialinterface of M-PHY are adopted.

The memory I/F circuit 16 controls a process of writing data and thelike into each memory chip 4 and a process of reading data and the likefrom each memory chip 4 based on an instruction from the CPU 11.

The CPU 11 generally controls the memory controller 3. The CPU 11 thatmakes up a control circuit is, for example, a CPU (Central ProcessingUnit), an MPU (Micro Processing Unit), or the like. When a request isreceived from the host via the host I/F circuit 15, the CPU 11 performscontrol that corresponds to the request. For example, the CPU 11instructs the memory I/F circuit 16 to write data into each memory chip4 in response to a request from the host 2. The CPU 11 also instructsthe memory I/F circuit 16 to read data from each memory chip 4 inresponse to a request from the host 2.

The RAM 13 can be used to temporarily store the data received from thehost 2 before storing the data in each memory chip 4, or temporarily tostore the data read from each memory chip 4 before transmitting the datato the host 2. The RAM 13 is, for example, a general-purpose memory suchas an SRAM (Static Random Access Memory), a DRAM (Dynamic Random AccessMemory) or the like. Further, the RAM 13 is provided with an area LUT 13a that stores a logical-to-physical address conversion table.

The CPU 11 determines a storage area (memory area) on a memory chip 4for the data stored in the RAM 13. The data are stored in the RAM 13 viathe internal bus 17. The CPU 11 determines the memory area for, forexample, data in page units. A page unit corresponds in size to a writeunit (amount of data that can be written at the same time to a memorychip 4) and a page unit's worth of data may be referred to as page data.

A physical address is allocated to the memory area of the memory chip 4.The CPU 11 manages the allocated memory area of a data write destinationby using the physical address. The CPU 11 designates the physicaladdress of a memory area and instructs the memory I/F circuit 16 towrite the data into the memory chip 4 at the selected memory area. TheCPU 11 manages a logical-to-physical address conversion table in thearea LUT 13 a of the RAM 13. The logical-to-physical address conversiontable represents the correspondence between the logical address of thedata (the logical address is managed/assigned by the host 2) and thephysical address at which the data are written. When a read requestincluding the logical address is received from the host 2, the CPU 11specifies the physical address corresponding to the logical address,designates the physical address, and instructs the memory I/F circuit 16to read the data accordingly.

The ECC circuit 14 encodes the data stored in the RAM 13 to generate acode word or the like. The ECC circuit 14 also decodes a code word readfrom each memory chip 4.

FIG. 2 represents an example of a configuration in which the memorycontroller 3 includes the ECC circuit 14 and the memory I/F circuit 16as separate circuits. It is noted that the ECC circuit 14 may, in someexamples, be built in the memory I/F circuit 16. In still otherexamples, an ECC circuit 14 may be built in each memory chip 4.

When a write request (a write command) is received from the host 2, thememory controller 3 operates as follows. The CPU 11 temporarily storesthe just received write data in the RAM 13. The CPU 11 then reads thedata stored in the RAM 13 and inputs the data to the ECC circuit 14. TheECC circuit 14 encodes the input data, and provides a corresponding codeword to the memory I/F circuit 16. The memory I/F circuit 16 writes thecode word into one or more memory chips 4.

When a read request (read command) is received from the host 2, thememory controller 3 operates as follows. The memory I/F circuit 16provides the ECC circuit 14 with the code word read from the memorychip(s) 4. The ECC circuit 14 decodes the input code word, and storesthe decoded data in the RAM 13. The CPU 11 transmits the data stored inthe RAM 13 to the host 2 via the host I/F circuit 15.

FIG. 3 is a block diagram illustrating an example of a configuration ofa memory chip 4. The memory chip 4 includes a NAND I/O interface 21, acontrol circuit 22, a NAND memory cell array 23, a bit line driver 24,and a word line driver 25. The NAND I/O interface 21 receives controlsignals such as a write enable signal (Wen), a read enable signal (Ren),an address latch enable signal (ALE), and a command latch enable signal(CLE) that may be output from the memory controller 3. The NAND I/Ointerface 21 also receives commands, addresses, and data output from thememory controller 3.

The bit line driver 24 is configured to be capable of independentlyapplying voltages (or currents) to a plurality of bit lines BL, andindependently detecting voltages (or currents) of the plurality of bitlines BL.

The word line driver 25 is configured to be capable of independentlyapplying voltages to a plurality of word lines and select gate lines.

The control circuit 22 receives control signals, commands, addresses,and data from the NAND I/O interface 21, and controls the operation ofthe memory chip 4 based on the control signals, commands, address(es),and data. For example, the control circuit 22 controls the word linedriver 25 and the bit line driver 24 based on the control signals,commands, addresses, and data, to execute a write operation, a readoperation, an erase operation, and the like.

Voltages supplied to the bit line driver 24 and the word line driver 25are generated by a voltage generation circuit 26. The voltage generationcircuit 26 is controlled by the control circuit 22 to generate therequired voltages. For example, the control circuit 22 controls thevoltage generation circuit 26 to set a voltage to be applied to theplurality of word lines WL by the word line driver 25 and a voltage tobe applied to the plurality of bit lines BL by the bit line driver 24 (abit line voltage). In this way, writing into a memory cell transistor(also referred to as a memory cell) of the NAND memory cell array 23,reading from a memory cell transistor, and erasing of a memory celltransistor are performed.

For example, when a write command is input, the control circuit 22controls the bit line driver 24 and the word line driver 25 to writedata received along with the write command into a designated address onthe NAND memory cell array 23. When a read command is input, the controlcircuit 22 controls the bit line driver 24 and the word line driver 25to read data from a designated address of the NAND memory cell array 23.

(Commands of Host)

For a data recording, the CPU 2 a of the host 2 generates a writecommand, and transmits the write command to the memory controller 3along with a logical address of the data (for example, a head addressand a data size) and the data to be written. For a data reading, the CPU2 a generates a read command, and transmits to the memory controller 3the read command along with a logical address of the data (for example,a head address and a data size). In addition, during the data recording,in many cases, the writing is performed by, for example, a writingmethod that provides the largest number of cell bits in a memory device.

In the present embodiment, the CPU 2 a is configured to generate ahigh-speed read preparation command at a predetermined timing before adata reading. The high-speed read preparation command is a command forsetting a mode (a high-speed read preparation mode) in which the memorycontroller 3 reads data previously written by a writing method providinga relatively large number of cell bits and then re-records thispreviously written data using a writing method providing a smallernumber of cell bits than that at the time of the initial writing. Whentransmitting the high-speed read preparation command, the CPU 2 atransmits information to the memory controller 3 including or indicatingthe logical address of data which is highly likely to be read inconjunction with a subsequently sent read command.

For example, in game data, OS (operating system) data, etc., there isdata that is more frequently used or data that needs to be read at ahigher speed than other data. Also, there may be written data that ishighly likely to be accessed again immediately after the data is written(temporal locality) or data of an address adjacent to an address of readdata may be highly likely to be accessed (spatial locality).

The CPU 2 a having knowledge about the data access pattern orexpectations, designates a logical address of such data (high-speed readdata), and transmits the logical address to the memory controller 3together with the high-speed read preparation command.

At the time of initial data writing, it is also conceivable simply toperform the recording by a writing method corresponding to SLC. However,there may be not only data that requires the high-speed reading at alltimes, but also data that requires the high-speed reading only for acertain period of time, depending on, for example, the characteristicsof a program being executed on the host 2. Use of the high-speed readpreparation command as in the present embodiment may be extremelyeffective with respect to optimizing storage capacity and read timeswhen the high-speed reading of certain data is desired to be performedduring a certain period rather than constantly or the like.

FIG. 4 is a view illustrating an example of a command format forimplementing the high-speed read preparation command and a write-backcommand. FIG. 4 corresponds to a UFS device example.

In the UFS protocol, a command UPIU (UFS Protocol Information Unit) isused to transmit commands from a host to a device, and a CDB (CommandDescriptor Block) from byte[16] to byte[31] in the command UPIU is usedto implement various types of commands. The example of FIG. 4 is anexample of a format of the high-speed read preparation command and thewrite-back command using this CDB.

The “OPERATION CODE” is a newly established command number. The “MODE”describes information that distinguishes whether a command is a“high-speed read preparation command” or a “write-back command”. The“LOGICAL BLOCK ADDRESS” indicates a logical address. The “TRANSFERLENGTH” indicates a target data size.

For example, the host 2 transmits a high-speed read preparation commandin a format illustrated in FIG. 4 to the memory controller 3. When thehigh-speed read preparation command is received, the CPU 11 of thememory controller 3 executes the high-speed read preparation mode. Thatis, the CPU 11 refers to the data deployed in the LUT 13 a to convert alogical address designated by the host 2 into a physical address. TheCPU 11 transmits the converted address and a read command to the memorychip 4. As a result, the control circuit 22 of the memory chip 4 drivesthe bit line driver 24 and the word line driver 25 to read data from anaddress designated by the memory controller 3, and transmits the data tothe memory controller 3. The CPU 11 stores the read data in the RAM 13.

The CPU 11 next selects a writing method having number of cell bitsproviding a high-speed read data, and writes the data stored in the RAM13 back in the memory chip 4 using the selected writing method. In thiscase, the CPU 11 designates an address corresponding to the selectedwriting method. That is, the CPU 11 updates the LUT 13 a to change thephysical address corresponding to the read data to a physical addresscorresponding to the location of the data to be rewritten (using a lowercell bit number), and transmits this physical address and a writecommand to the memory chip 4. The control circuit 22 of the memory chip4 drives the bit line driver 24 and the word line driver 25 based on thedesignated address, and (re)writes the data using the designated writingmethod.

(Operation)

FIG. 5 illustrates a timing chart for a reading in a first embodiment,and FIG. 6 illustrates a timing chart for writing and reading in acomparative example. FIG. 7 illustrates a memory map representing amemory area of the memory chip 4, and FIG. 8 is a flowchart illustratingthe operation of the first embodiment.

First, the writing and reading operations of a comparative exampleillustrated in FIG. 6 will be described. For writing, the host 2generates a write command, and outputs a logical address (head address(X) and data size (Y)) of data to be written and the data to be written(write data) to the memory controller 3 ((1) and (2) in FIG. 6 ). Thememory controller 3 converts the logical address of the write data intoa physical address by logical-to-physical address conversion and updatesthe LUT 13 a accordingly. The memory controller 3 then designates thephysical address and transmits the write data to the memory chip 4. Thememory chip 4 writes the write data into a memory area of the NANDmemory cell array 23 designated by the physical address. In addition,the memory controller 3 also gives an instruction to the memory chip 4to write the write data using a writing method corresponding to somepredetermined number of cell bits. For example, the writing is performedby a writing method corresponding to QLC ((3) in FIG. 6 : multi-valuedata writing).

Next, it is assumed that the host 2 issues a read command to read thedata written in the memory chip 4. In this case, the host 2 generates aread command, and outputs the logical address (head address (X) and datasize (Y)) of the data to be read to the memory controller 3 ((4) in FIG.6 ). The memory controller 3 checks the LUT 13 a to convert the logicaladdress of the read data into a physical address, designates theconverted physical address, and then reads the data of the memory chip 4((5) in FIG. 6 ): multi-valued data reading). This data now being readwas previously written by, for example, a writing method having a largenumber of cell bits such as QLC, and the control circuit 22 of thememory chip 4 thus performs a read control corresponding to the previouswriting method to acquire read data, and then transfers the acquiredread data to the memory controller 3. The memory controller 3 transfersthe received read data to the host 2 as part of a read (command)response ((6) and (7) in FIG. 6 ). As described above, in reading datawritten by the writing method having a large number of cell bits, the tRis large.

For the present embodiment, the operations at the time of initial datawriting is generally the same as that of the comparative example. Thepresent embodiment differs from the comparative example in that thehigh-speed read preparation mode is executed before the reading of thepreviously written data in response to a read command. FIG. 5illustrates only the operation at the time of reading since theoperation at the time of writing corresponds generally to (1), (2), and(3) of FIG. 6 , already described. For the reading, the host 2 generatesa high-speed read preparation command at some time before the actualdata reading is required by the host 2. That is, the CPU 2 a of the host2 transmits the logical address (head address (X) and data size (Y)) ofthe data determined to require high-speed reading (high-speed read data)and the high-speed read preparation command to the memory controller 3((1) in FIG. 5 ). The CPU 11 of the memory controller 3 is initially inthe standby state (S1 in FIG. 8 ) waiting for a high-speed readpreparation mode instruction. When the high-speed read preparationcommand and the logical address are received (YES in S1), the CPU 11executes the high-speed read preparation mode. That is, the CPU 11performs a control (preparation read control) of referring to the LUT 13a to convert the received logical address into a physical address (S2),designating the converted physical address, and reading the data of thememory chip 4. The data instructed to be read may have been previouslywritten using a writing method having a large number of cell bits suchas QLC, and the control circuit 22 of the memory chip 4 performs thereading corresponding to the previously utilized writing method ((2) inFIG. 5 : multi-valued data reading) to acquire the high-speed read data,and then transfer the acquired high-speed read data to the memorycontroller 3 (S4).

In the preparation read control, the CPU 11 stores the receivedhigh-speed read data in the RAM 13. The CPU 11 next writes thehigh-speed read data (as read in the preparation read control) back intothe memory chip 4 using a writing method with the smaller number of cellbits (so tR is smaller) ((3) in FIG. 5 ). For example, when thehigh-speed read data was previously written by a writing methodcorresponding to QLC, the subsequent writing is performed by a writingmethod corresponding to TLC, MLC, or SLC. The CPU 11 selects a memoryarea into which the high-speed read data is to be rewritten, and updatesthe LUT 13 a accordingly. The CPU 11 transmits a command for causing thehigh-speed read data to be written again to the memory chip 4 togetherwith a write destination address (S6) (referred to as preparation writecontrol). The control circuit 22 of the memory chip 4 writes thehigh-speed read data into the memory area of the designated NAND memorycell array 23 (S7). In this case, the control circuit 22 controls eachunit to write the data using a writing method in which tR is small. Forexample, the writing is performed by a writing method corresponding toSLC.

FIG. 7 illustrates a memory area before and after such preparation writecontrol. In the example of FIG. 7 , the NAND memory cell array 23 is setwith two memory areas including one area for performing writing using anSLC writing method and the other area for performing writing using a QLCwriting method. Although the SLC/QLC writing methods are set as theusage methods, the area for designated for each method is not completelyfixed. An SLC area includes a management area and a LUT area for storinga logical-to-physical address conversion table. In this example, thehigh-speed read data was initially written in an area R4 in a QLC area.In the high-speed read preparation mode, the memory controller 3 readthe high-speed read data from the area R4, and then wrote the high-speedread data in an area R3 in the SLC area. After the high-speed readpreparation mode is completed, the physical address of the high-speedread data stored in the LUT 13 a indicates the area R3.

When the preparation write control is completed, the CPU 11 of thememory controller 3 generates a high-speed read preparation commandresponse indicating that the high-speed read preparation mode has beencompleted, and transmits the high-speed read preparation commandresponse to the host 2 ((4) in FIG. 5 ). In some examples, thehigh-speed read preparation command response can be omitted by thedesignation by the host 2 or the like.

Next, the host 2 requests the high-speed read data written in the memorychip 4. That is, the host 2 generates a read command and outputs alogical address (head address (X) and data size (Y)) of the high-speedread data to the memory controller 3 ((5) in FIG. 5 ). The memorycontroller 3 is at this time in a read command standby state in S8, andwhen the read command is received (YES in S8), the memory controller 3refers to the information in the LUT 13 a to convert the logical addressof the high-speed read data into a physical address, designates theconverted physical address (the physical address indicating the area R3in FIG. 7 in this example), and reads the data of the memory chip 4 (S9,(6) in FIG. 5 ). This high-speed read data was (re)written using awriting method having a small number of cell bits such as SLC in thepreparation write control, and the control circuit 22 of the memory chip4 performs a read control corresponding to the writing method to acquirehigh-speed read data. The control circuit 22 transfers the acquiredhigh-speed read data to the memory controller 3. The memory controller 3transfers the received high-speed read data to the host 2, and transmitsa read response to the host 2 ((7) and (8) in FIG. 5 ). Since high-speedread data was (re)written using a writing method having a small tR(small number of cell bits), high-speed reading is possible.

In this way, in the present embodiment, it is possible to enhance theperformance at the time of data reading by changing a writing method ofrecorded data to a writing method with smaller tR, and re-recording therecorded data according to the request from the host. This prevents thedata transfer speed from the memory device to the host from beinglimited by tR, thereby enabling the high-speed data reading.Furthermore, by targeting only the data specifically designated by thehost 2 for this rewriting process, it is possible to prevent an adverseeffect on the recordable capacity of the device.

Second Embodiment

FIGS. 9A and 9B are a flowchart illustrating an operation flow adoptedin a second embodiment. In FIGS. 9A and 9B, the same procedures as thosein FIG. 8 will be denoted by the same reference numerals, anddescriptions thereof will be omitted. The hardware configuration of thesecond embodiment is the same as that of the first embodiment.

In the first embodiment, the read performance is enhanced by adoptingthe high-speed read preparation mode. In the high-speed read preparationmode, since the data recorded by the writing method having a largenumber of cell bits must be re-recorded by a writing method having asmaller number of cell bits, the recording density of the memory celltransistor is reduced, thereby reducing the maximum recordable capacityof the memory device. Therefore, the second embodiment involvescontrolling data that do not need to be read at a high speed to bewritten back by a writing method in which the number of cell bits isincreased again.

As in the first embodiment, the host 2 may issue a high-speed readpreparation command, but then also may issue a write-back command forwriting-back the high-speed read data using a writing method having alarger tR (larger number of cell bits). In some examples, when thememory area in which the high-speed read data is written to apredetermined area by the preparation write control, the host 2 mayissue just the write-back command without designating a logical addresscorresponding to the individual high-speed read data. In some examples,when high-speed read data is to be returned to normal speed read data,the host 2 may issue a logical address for designating the high-speedread data to be written back together with the write-back command.

The CPU 11 of the memory controller 3 determines in S8 of FIG. 9Bwhether or not a read instruction has been received. When it isdetermined that there has been no read request (NO in S8), the CPU 11next determines, in S10, whether or not a write-back instruction or apower-off instruction has been received. When no write-back instructionor power-off instruction has been received (NO in S10), the CPU 11returns the process to S8 to determine whether or not a read request hasbeen received.

If the host 2 generates a write-back command and transmits this commandto the memory controller 3, once the write-back command is received (YESin S10), the CPU 11 of the memory controller 3 performs write-backcontrol for writing back the high-speed read data using a writing methodhaving a larger number of cell bits. In the write-back control, the CPU11 designates a physical address of the memory area of the high-speedread data stored in the LUT 13 a, and reads the data (S11). The CPU 11stores this read data in the RAM 13. Next, the CPU 11 updates thephysical address of the memory area of the high-speed read data storedin the LUT 13 a to a physical address of the memory area correspondingto the writing method having a larger number of cell bits, and updatesthe contents of the LUT 13 a (S12). The CPU 11 designates the updatedphysical address and transmits a write-back instruction of thehigh-speed read data to the memory chip 4 (S13).

The control circuit 22 of the memory chip 4 writes the data to bewritten back into the memory area of the designated NAND memory cellarray 23 (S14). In this case, the control circuit 22 controls each unitso as to increase the number of cell bits. For example, in the case ofthe memory chip 4 corresponding to QLC, writing is performed by awriting method corresponding to QLC.

If the power is to be turned off, the host 2 may issue a write-backcommand before the power is turned off, and may control all high-speedread data to be re-recorded using a writing method having a largernumber of cell bits. Alternatively, when the power-off is instructed,even though the write-back command was not received, the memorycontroller 3 may automatically control all the high-speed read data tobe re-recorded using a writing method having a larger number of cellbits before the power is turned off. The process S10 in FIG. 9Brepresents an example of this particular case.

Before the power is turned off, the CPU 11 transfers the contents of theLUT 13 a to the memory chip 4, and stores the contents in an area R2 ofthe NAND memory cell array 23.

In this way, by using the write-back command, the host 2 can store justthe necessary high-speed read data for a required period using a writingmethod having a small tR. As a result, it is possible to enhance theread characteristics while mitigating any influence on the overallstorage capacity of the memory device.

(Modifications)

FIG. 10 is a block diagram illustrating a modification. The componentsin FIG. 10 which are substantially the same as those in FIG. 2 aredenoted by the same reference numerals.

In the second embodiment, high-speed read data initially recorded by thewriting method having a large number of cell bits may not be readablefrom the same location thereafter (move mode reading). However, sincegenerally write-back control is to be later performed, the data at theinitial recording location may be read and left un-erased at the initialrecording location (copy mode reading). Therefore, in the presentmodification, the initial memory area for the high-speed read datarecorded using the writing method having a large number of cell bits canbe stored, and for later write back, the LUT 13 a can be updated toagain indicate the initial memory area as the location of the datarather than the high-speed read area (e.g., the SLC area). In thewrite-back control, the high-speed read data recorded using a writingmethod having a smaller number of cell bits in the high-speed read area(e.g., the SLC area) can be erased. For example, the CPU 11 enables thecopy mode reading by storing information indicating the correspondencebetween a physical address of the memory area of the high-speed readdata recorded using the writing method having a large number of cellbits, and a logical address, in an area LUTS 13 b of the RAM 13. Then,the CPU 11 updates the LUT 13 a by using the information of the LUTS 13b at the time of the write-back control. In the write-back control,after the LUT 13 a is updated, the high-speed read data recorded usingthe writing method having a smaller number of cell bits can be erased.

FIGS. 11A and 11B are a flowchart illustrating the operation in thismodification. The same processes in FIGS. 11A and 11B as those in FIG. 8are denoted by the same reference numerals.

As illustrated in FIGS. 11A and 11B, when a reading is performed by thepreparation read control, the CPU 11 registers the correspondencebetween the read physical address and the logical address in the LUTS 13b (S21). The CPU 11 then updates the LUT 13 a with the physical addressof the write destination of the preparation write control (S5). As aresult, in the subsequent reading of the high-speed read data, thehigh-speed read data written by the writing method having a small numberof cell bits is read. When the write-back command or the power-offinstruction is received (YES in S10), the CPU 11 reads thecorrespondence relationship between the physical address in which thehigh-speed read data was originally written, and the logical address,from the LUTS 13 b, and updates the physical address information of thecorrespondence relationship between the physical address stored in theLUT 13 a and the logical address (S22). As a result, the high-speed readdata stored in the NAND memory cell array 23 is subsequently read by thewriting method having a large number of cell bits, which may reduce theinfluence on the capacity of the memory area.

In this way, by storing the high-speed read data read by the preparationread control in a state in which the high-speed read data is not erased(the area may also be protected from other data operations or reserved),once the write-back control is performed, it can be handled by justupdating the logical-to-physical address conversion table, andtherefore, actual reading and writing of data for the write-back controlcan be omitted.

In the above description, an example in which the memory controller 3performs one of the move mode reading and the copy mode reading wasdescribed. Alternatively, these reading modes may be switchable. Forexample, the memory controller 3 may be dynamically switchable, such asperforming the copy mode reading when a free space is larger than apredetermined threshold value, and performing the move mode reading whenthe free space is equal to or less than the predetermined thresholdvalue.

In some examples, the host 2 may add an ID to the data so that when thepower is turned off, the high-speed read data for which write-backcontrol is to be performed and high-speed read data for which thewrite-back control is not to be performed may be designated in advancewith the ID by the memory controller 3. In this case, the memorycontroller 3 may record the correspondence relationship between the IDand the logical address/the physical address in the RAM 13, and when apower-off instruction is issued, the memory controller 3 may refer tothe ID to determine the high-speed read data for which the write-backcontrol is to be performed.

(Modification)

FIG. 12 is a flowchart illustrating another modification. In each of theabove embodiments, it was described that the CPU 11 selects a writingmethod having a smaller tR than the original writing method of theacquired high-speed read data when performing the preparation writecontrol. This modification concerns an example of this selection.

In FIG. 12 , the CPU 11 acquires the original writing method of thehigh-speed read data, that is, the writing method of the high-speed readdata recorded in the NAND memory cell array 23 before the preparationread control (S31). For example, assuming that this writing methodcorresponds to QLC, a writing method corresponding to SLC, MLC, or TLCis a candidate as the writing method at the time of preparation writecontrol.

The CPU 11 controls the RAM 13 and the host I/F circuit 15 to acquireinformation on the host interface speed and the free capacity of theNAND memory cell array 23 (S32 and S33). The CPU 11 then selects thewriting method at the time of preparation write control based on thisacquired information (S34). That is, the CPU 11 adopts a writing methodin which tR (the number of cell bits) is selected to obtain the limitread performance faster than the host interface speed if possible. Forexample, if a limit read performance faster than the host interfacespeed can be obtained by use of TLC or MLC, then TLC or MLC may be usedinstead of SLC. The CPU 11 selects a writing method corresponding to SLCwhen a sufficiently high-speed limit read performance cannot otherwisebe obtained.

In addition, the CPU 11 adopts a writing method that can leave asufficient free space. For example, when the desired limit readperformance faster than the host interface speed can be obtained withany of SLC, MLC, and TLC, a writing method in which the available freespace is kept larger may be adopted.

In this way, in this modification, it is possible to enhance the limitread performance while still providing a sufficient free space.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosure. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of thedisclosure. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the disclosure.

What is claimed is:
 1. A memory system, comprising: a memory arrayhaving a plurality of memory cells configured to store two or more bitsof data in each of the memory cells; and a memory controller configuredto cause data to be written into of the plurality of memory cells usingwriting methods for different number of bits of data and cause the datawritten into the plurality of memory cells to be read, wherein when afirst command is received from a host, the memory controller isconfigured to cause data indicated by the first command to be read fromthe plurality of memory cells, and then cause the read data to berewritten into the plurality of memory cells using a writing method fora fewer number of bits per memory cell than the writing method used towrite the data to the plurality of memory cells before the reading ofthe data, and when a read command corresponding to the data indicated bythe first command is received from the host after the first command, thememory controller is configured to read the rewritten data from theplurality of memory cells, and then transfer the data to the host. 2.The memory system according to claim 1, wherein, when a second commandis received from the host, the memory controller is configured to causethe data written in the memory cells using the writing method for thefewer number of bits per memory cell to be read and then rewritten intothe plurality of memory cells using a writing method for an increasednumber of bits per memory cell than the previous writing method.
 3. Thememory system according to claim 1, wherein, when an instruction topower off is received by the memory controller, the memory controller isconfigured to cause the data written in the memory cells using thewriting method for the fewer number of bits per memory cell to be readand then rewritten into the plurality of memory cells using a writingmethod for an increased number of bits per memory cell than the previouswriting method.
 4. The memory system according to claim 1, wherein thememory array has a memory area for each of the different writingmethods.
 5. The memory system according to claim 4, wherein the memorycontroller is configured to maintain a logical-to-physical addressconversion table for converting a logical address of data designated bythe host into a physical address of the memory array.
 6. The memorysystem according to claim 1, wherein the memory controller is configuredto maintain a logical-to-physical address conversion table forconverting a logical address of data designated by the host into aphysical address of the memory array and to update thelogical-to-physical address conversion table upon rewriting the readdata using the writing method for the fewer number of bits per memorycell in response to the first command.
 7. The memory system according toclaim 1, wherein the memory controller is configured to select thewriting method for rewriting the read data in response to the firstcommand the based on a data transfer rate of a host interface and a freespace of the memory array.
 8. The memory system according to claim 1,wherein the memory cells are NAND-type memory cells.
 9. The memorysystem according to claim 1, wherein the writing method for the fewernumber of bits per memory cell is a single-bit level writing method. 10.The memory system according to claim 1, wherein the writing method forthe fewer number of bits per memory cell is a two-bit level writingmethod.
 11. A memory controller, comprising: a host interface configuredto communicate with a host device and receive commands from the hostdevice; a memory interface configured to communicate with a memory arrayhaving memory cells in which multibit can be stored; and a processorconfigured to: control the memory interface to cause data to be readfrom the memory array, and control the memory interface to cause data tobe written into the memory array using either a low bit writing methodor a high bit writing method, wherein when a first type commanddesignating specific data in the memory array is received from the hostdevice via the host interface, the memory controller is configured tocontrol the memory interface to cause the designated specific data to beread from the memory array then rewritten to the memory array using thelow bit writing method data, and when a read command designating thespecific data is received from the host device via the host interface,the memory control is configured to control the memory interface tocause the designated specific data to be read from the memory array andthen output to the host device via the host interface.
 12. The memorycontroller according to claim 11, wherein the processor is furtherconfigured to control the memory interface to cause the previouslyrewritten specific data to be written again into the memory array usingthe high bit writing method upon receiving either a second type commandfrom the host device via the host interface or a power down notice. 13.The memory controller according to claim 11, wherein the processor isfurther configured to manage a logical-to-physical address conversiontable for converting a logical address of data designated by the hostdevice into a physical address of the memory array.
 14. The memorycontroller according to claim 13, wherein the memory array uses a copymode reading when reading the designating specific data, and theprocessor is further configured to manage a secondarylogical-to-physical address conversion table in which the initiallocation of the specific designated data in the memory array prior tothe rewriting is tracked.
 15. The memory controller according to claim14, wherein the processor is further configured to update thelogical-to-physical address conversion table to associate the logicaladdress of the specific designated data with the initial location fromthe secondary logical-to-physical address conversion table uponreceiving either a second type command from the host device via the hostinterface or a power down notice.
 16. The memory controller according toclaim 11, wherein the low bit writing method is a single-bit levelwriting method.
 17. The memory controller according to claim 11, whereinthe memory controller is configured to set a bit-level of the low bitwriting method based on a data transfer rate of the host interface and afree space of the memory array.
 18. A memory control method, comprising:writing data into a memory array using a high bit writing method inwhich each memory cell written stores at least two bits of data; uponreceiving a first command from a host device, reading data designated bythe first command from the memory array and then rewriting the data tothe memory array using a low bit writing method in which fewer bits permemory cell are stored in each memory cell written than with the highbit writing method; and upon receiving a read command from the hostdevice designating the data designated by the first command, reading thedata rewritten into the memory array and then transferring the read datato the host device.
 19. The memory control method according to claim 18,wherein the low bit writing method is a single-bit level writing method.20. The memory control method according to claim 18, wherein the highbit writing method is a three-bit level writing method or a four-bitlevel writing method, and the low bit writing method is a two-bit levelwriting method.